We present an n-PERT solar cell technology that uses thin LPCVD polysilicon layers to obtain a passivated rear side contact by capping the layers with PECVD SiNx:H layers and contacting them with standard firing-through silver pastes.The ability to use standard metallization processes for this application is a novel development which we hope will significantly enhance the potential for passivated contact technology based on polysilicon layers.We obtained a certified cell efficiency of 20.81% and a VOC of 667 mV on a 6" semi-square n-Cz substrate by adding the polysilicon deposition step to an existing process flow that is already being used in large-scale production for making n-PERT solar cells,so we believe that the time needed for industrial implementation will be relatively short.The process flow is based on BBr3 diffusion for the emitter formation,Phosphorus implantation for the polysilicon doping and thermal oxidation for the emitter passivation.When compared to the standard n-PERT production cells our preliminary results show an average cell efficiency increase of 0.4-0.6%.Based on these results and other measurements we show that the cell efficiency can reach more than 21% with further optimization of the process settings.