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5. A Bilayer Diffusion Barrier of Ru/WSixNy for seedless Cu interconnects

A Bilayer Diffusion Barrier of Ru/WSixNy for seedless Cu interconnects

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：wxiaof

【摘 要】

：

Bilayers of Ru(7nm)/WSixNy(8nm) prepared by sputtering were investigated as diffusion barriers between Cu and Si for direct-plateable Cu interconnects and their diffusion barrier performances were com

【作 者】

：

Tae-Kwang Eom Windu Sari Soo-Hyun Kim 

【机 构】

：

School of Materials Science and Engineering, Yeungnam University 214-1, Dae-dong, Gyeongsan-si, Gyeo

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Ru/WSixNy Cu metallization diffusion barrier Cu electroplating 

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Bilayers of Ru(7nm)/WSixNy(8nm) prepared by sputtering were investigated as diffusion barriers between Cu and Si for direct-plateable Cu interconnects and their diffusion barrier performances were compared with a single layer Ru with the same thickness (15 nm).

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