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5. Investigation on the Control of Silicon Whisker Generation during Dichlorosilane-Based WSi Depositio

Investigation on the Control of Silicon Whisker Generation during Dichlorosilane-Based WSi Depositio

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：gmtt123

【摘 要】

：

Semiconductor industry faces a continuous challenge to increase the production yield by eliminating defect sources.The majority of the defect is caused by synthesized nano-materials in the process cha

【作 者】

：

Myeonghun Oh Jinsung Kim Jaungoo Kim Ji Chul Yang Soochul Lee Hoomi Ch 

【机 构】

：

Memory center, Device solution business, Samsung electronics, Nongseo, Yongin, Korea

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Silicon whisker CVD (chemical vapor deposition) 

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Semiconductor industry faces a continuous challenge to increase the production yield by eliminating defect sources.The majority of the defect is caused by synthesized nano-materials in the process chamber.

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