Initial transient state during silicon thin film deposition under high pressure conditions

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：wendychenwang

【摘要】

：

【作者】

：

Shengzhi Xu Xiaodan Zhang Shuangliang Li Changchun Wei

【机构】

：

Photo-electronics institute of thin film devices and technology, Nankai University, NO.94 of Weijin

【出处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Mass spectrometry Microcrystalline silicon thin film Plasma diagnostics

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Mass spectrometry was applied as in situ process diagnostics during deposition of silicon thin films.By measuring the silane concentration in plasma region,the transient depletion of silane at the beginning of discharge was observed,and which leading to large thickness of incubation layer of microcrystalline silicon thin film was proved.

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Initial transient state during silicon thin film deposition under high pressure conditions

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