In situ monitoring of GaN substrate surface in ICP containing energetic electrons

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：fengyu3

【摘要】

：

In this paper we describe a new method for in situ monitoring GaN substrate surface in inductively-coupled plasmas (ICP) containing energetic electrons.

【作者】

：

Ying Guo Hanwen Zhang Ke Ding Jing Zhang Hideo Sugai

【机构】

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COLLEGE OF SCIENCES, DONGHUA UNIVERSITY 2999 North Ren Min Road, Shanghai 201620, PR. China

【出处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

In situ GaN Damage density ICP

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In this paper we describe a new method for in situ monitoring GaN substrate surface in inductively-coupled plasmas (ICP) containing energetic electrons.

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In situ monitoring of GaN substrate surface in ICP containing energetic electrons

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