2. 您的位置
3. 首页
4. 会议论文
5. Electrical Performance of Organic Field Effect Transistor (OFET) with High-k Gate Oxides under Conse

Electrical Performance of Organic Field Effect Transistor (OFET) with High-k Gate Oxides under Conse

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：liongliong419

【摘 要】

：

Organic materials such as pentacene have been attracted due to the low cost,easy process and flexibility.1 These materials are being widely used in organic electronic circuits such as organic field ef

【作 者】

：

Sunwoo Lee Junghyuck Park Changhwan Choi Kil-Bock Lee Joong Hwee Cho 

【机 构】

：

Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791, Korea

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Organic field effect transistor (OFET) High-k gate dielectric Electrical Stress 

下载到本地 , 更方便阅读

下载此文 赞助VIP

声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架

论文部分内容阅读

Organic materials such as pentacene have been attracted due to the low cost,easy process and flexibility.1 These materials are being widely used in organic electronic circuits such as organic field effect transistor (OFET) and organic sensor.

其他文献

Investigation on the Control of Silicon Whisker Generation during Dichlorosilane-Based WSi Depositio

Semiconductor industry faces a continuous challenge to increase the production yield by eliminating defect sources.The majority of the defect is caused by synthesized nano-materials in the process cha

会议

Silicon whiskerCVD (chemical vapor deposition)

Controlling the Wetting Properties of Low-reflectivity Silicon Surfaces via Surface Modification

Controlling of surface wettability from superhydrophilic (water contact angle (CA)＜5°) to superhydrophobic (water CA＞150°) have been received much attention for various biological and industrial appli

会议

SuperhydrophobicitySilicon nanowireAnti-reflectionWettability control

Surface Modification by Atmospheric Pressure Plasma for Improved Adhesion of Ag Pattern Screen-print

Printed electronics have been highlighted as an emerging manufacturing technology to fabricate the electronic and display devices from researchers in academia and industry.

会议

AdhesionAtmospheric Pressure PlasmaScreen Printing

High-Performance InGaP/GaAs Superlattice-Emitter Bipolar Transistor with Multiple S-shaped Negative-

The epitaxial layers consisted of a 0.5 μm n+ = 1 × 1019 cm-3 GaAs subcollector layer,a 0.5 μm n- = 2 × 1016 cm-3 GaAs collector layer,a 100 (A) p+ = 1 × 1019 cm-3 In0.15Ga0.85As base layer,a 300 (A)

会议

superlattice-emitterbipolar transistornegative-differential-resistanceswitch

A Bilayer Diffusion Barrier of Ru/WSixNy for seedless Cu interconnects

Bilayers of Ru(7nm)/WSixNy(8nm) prepared by sputtering were investigated as diffusion barriers between Cu and Si for direct-plateable Cu interconnects and their diffusion barrier performances were com

会议

Ru/WSixNyCu metallizationdiffusion barrierCu electroplating

Synthesis and characterization of composition spread Ti-Si-N nano-composite thin films

A Mask Confined Continuous Composition Spread (MCCCS) technique was developed for high-throughput thin film materials synthesis and optimization.

会议

Ti-Si-N thin filmmagnetron sputteringcontinuous composition spreadhardnessep

Analysing the Feature of Instantaneous Positive Sequence Network When Single-phase grounding in Reso

Establishing the mathematical model of instaneous positive sequence network of power source,petersen coil grounding,ground point,capacitance to the ground to the 10kV medium-voltage resonance groundin

会议

The Resonance Grounding SystemInstantaneous Symmetrical ComponentInstantaneous

Investigation of in-situ Cu film growth on graphene/Cu agglomerated substrate

Graphene has recently attracted massive interest since it has interesting material properties,such as extremely high electron mobility,anomalous Hall effect,Dirac quasiparticle excitations,weak spin-o

会议

Cu on Graphenein-situ Cu depositionfractal-like growthdendritic-like growth

Discharge property and materials application of a pulsed high-pressure dc glow plasma

A pulsed dc glow discharge plasma was formed with the power of 15 kW under the high gas pressures about 200 Torr.The discharge features of the DC plasma were investigated by using optical emission spe

会议

Dc Glow PlasmaHigh PressureDischarge Property

Material properties of hydrogenated nanocrystalline silicon thin films by RF-PECVD using He-SiH4 mix

Hydrogenated nanocrystalline silicon (nc-Si:H) and amorphous silicon thin film are expected to be promising materials for solar cell and thin film transistor.Especially,nc-Si∶H thin films have been re

会议

hydrogenated nanocrystalline siliconPECVDHe-SiH4