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Electrical resistivity is the most common and the most useful property of materials.Putting superconductors aside,this physical property can change over 33-35 0rders of magnitude,and in any individual materials it is a sensitive function of temperature.It seems unlikely to be able to obtain any single solids that can display constant electrical resistivity over a large temperature range,of 200 K say.Cu3N is a compound semiconductor in the anti-Re30 structure.The center of the cubic unit cells in the lattice is empty,and the increasing occupation of the cell centers by extra metal atoms induces a semiconductor-to-metal transition.For the doped samples that are just tuned to be semimetallic,the carrier density and carrier mobility may show opposite dependences upon temperature,and a nearly constant resistivity in some temperature range may ensue.This talk will report the growth of heavily doped Cu3NMx(M=Cu,Ag,Au and Pd)compound films,in which,fortunately,nearly constant electrical resistivity over a temperature range as large as 200 K was measured.A brief discussion over the relevant solid-state physics issues will also be presented.