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A novel electrode structure for mesa-arrayed infrared detectors is proposed.A relayed electrode at the bottom of the trench is realized by depositing the electrode twice separately.Comparing to the traditional extended electrode, the novel electrode structure is not only beneficial to simplify the electrode introducing at the bottom of the trench out from the bottom to the top of the trench, but also capable of enlarging the top area on the mesa arrays for the other processes and enhancing the structural integration correspondingly.The height and morphology of relayed electrode were not changed after experiencing 200W ultrasonic treatment for 5mins.As shown in the cross-sectional SEM pictures of the flip-chip bonded devices, the relayed electrode at the bottom of the trench connected into a whole and reached the metallization pads of the other side chip.These results have indicated it should be available to apply this new electrode structure to the mesa-arrayed infrared detectors.