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Source/drain (S/D) thermal formation is a strenuous issue on a single crystalline Si (s-Si) for the application of LCD and 3D integration because the minimum temperature required for S/D activation is around 1000℃.In this work,we investigate dopant-dependence of low temperature one-step dopants activation process in α-Si and then apply the technique to demonstrate p+/n and n+/p junctions on s-Si at 500℃.