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  5. Effects of the UV Treated SiCN Capping Layer on the SiOC(-H) Film Prepared by Plasma-Enhanced Atomic

Effects of the UV Treated SiCN Capping Layer on the SiOC(-H) Film Prepared by Plasma-Enhanced Atomic

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：guogangw1987
【摘 要】
：
Multilevel interconnection structures comprising of low-k films with inlaid copper wires in a dual damascene process have been identified as the new generation technology in the National Technology Ro
【作 者】
：
Kwang-Man Lee Chang Young Kim R. Navamathavan Chi Kyu Choi 
【机 构】
：
Department of Electronic Engineering, Research Institute of Advanced Technology,Jeju National Univer
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
【关键词】
：
Low-k materials SiCN films PEALD UV treatment FTIR 
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论文部分内容阅读
Multilevel interconnection structures comprising of low-k films with inlaid copper wires in a dual damascene process have been identified as the new generation technology in the National Technology Roadmap for Semiconductors.
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