Binary semiconducting oxides have been extensively investigated as building blocks for nanoscale electronic and optoelectronic devices, with the applications ranging from molecular chemical and biological nanosensors, nanocomputing, and data processing to nanoscale light-emitting diodes.In this work, metal oxides are successfully obtained by plasma enhanced chemical vapor deposition methods(PECVD).The metal chlorides are used as the metal precursors while oxygen plasmas act as the reactive species during the formation of metal oxides.Without the introduction of plasma, metal chlorides can hardly react with oxygen even at a temperature above 1200K.By using the plasma enhanced chemical vapor deposition; the metal oxides are successfully acquired at a temperature lower than 600K.Optical emission spectroscopy is used to monitor the active species to investigate the mechanism of the reaction.The successful preparation of the metal oxide indicates that the high energetic plasma has great promotion of the chemical vapor reactions.