【摘 要】
：
Germanium tin(GeSn)is a group Ⅳ alloy with high carder mobility and tunable energy bandgap [1].Theory predicts that the bandgap has a crossover between indirect and direct bandgap transition at around
【机 构】
：
School of Physical Science and Technology,Shanghaitech University,Shanghai 200050,China;State Key La
【出 处】
：
2015 Shanghai Thin Film Conference(2015上海薄膜国际会议)
论文部分内容阅读
Germanium tin(GeSn)is a group Ⅳ alloy with high carder mobility and tunable energy bandgap [1].Theory predicts that the bandgap has a crossover between indirect and direct bandgap transition at around 10%Sn content [2].Therefore,GeSn alloy is a promising candidate as a semiconductor material for advanced electronic and optoelectronic devices [3.4].GeSn thin films on Ge(001)with Sn composition up to 8.8%were grown by molecular beam epitaxy.The Sn composition was confirmed using high resolution x-ray diffraction(HRXRD),secondary ion mass spectrometry(SIMS)and transmission electron microscopy(TEM).And the surface morphologies were investigated by atomic-force microscopy(AFM).Moreover,the lattice quality was analyzed by TEM.It is discovered that the Sn composition in the tensile-strained GeSn thin films is evidently higher than that with compressive strained under the same growth conditions.The Sn composition in the GeSn thin films on InP(001)is 4.3 times higher than that on Ge(001).
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