Magnetoresistance Of High Quality Graphene Devices

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：hunterxjtu

【摘要】

：

　　Graphene devices on standard SiO/Si substrates are facing a bottleneck.These kind of devices can only show the primary characteristics of graphene,and is fa

【作者】

：

T.M.Chen Ching-Ya Cheng Chung-Lin Wu Ku-Yu Chen Chung-Jen Chung

【机构】

：

Department of Physics,National Cheng Kung University,Tainan 701,Taiwan

【出处】

：

2015台湾物理年会

【发表日期】

：

2015年期

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　　Graphene devices on standard SiO/Si substrates are facing a bottleneck.These kind of devices can only show the primary characteristics of graphene,and is far away from exhibiting some intrinsic properties and beautiful physics of graphene.

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Magnetoresistance Of High Quality Graphene Devices

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