Multi-wafer heteroepitaxial growth of 3C-SiC layers on Si(lll) substrates were performed by employing a novel home-made warm-wall low pressure chemical vapor deposition (WLPCVD) system with a rotating susceptor which was designed to support up to six 50 mm-diameter wafers.A set of experiments were done with the temperature fixed at 900°C with the C/Si ratio of ranging from I to 6.When the C/Si ratio was 3,3C-SiC wafers with smooth surface can be obtained.Atomic force microscopy (AFM) scans indicated an atomically smooth surface with a roughness (RMS) of 5.74 nm (5x5μm2).Also,to study the uniformity of the multi-wafer system,we dealt with the data of thickness obtained with ellipsometry.It was shown that when we get each wafer rotated,we would obtain 3C-SiC epilayers with good thickness uniformity.