【摘 要】
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Surface metallization of ceramic is a very practical process.However,sintering metallization of SiC ceramic is quite difficult due to no general bonding mechanisms(chemcial reactions and glass phase m
【机 构】
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School of Materials Science and Engineering,Jiangsu University,Zhenjiang,212013,China
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Surface metallization of ceramic is a very practical process.However,sintering metallization of SiC ceramic is quite difficult due to no general bonding mechanisms(chemcial reactions and glass phase migration)and serious graphitization reaction between SiC and many common metals,such as Fe,Cu,Ni and Co.We propose two kinds of non or low-reactive metallization processes(ion implantation and sintering metallization)of SiC ceramic and investigate the wettability and interface characteristics of metal/SiC systems before and after the two surface metallizations.The experimental results show that the Mo ion implantation of 6H-SiC monocrystalline substrate significantly improve the wettability of pure Ni and Ni-56Si alloy on the SiC,however,the two kinds of interface characteristics(reactive and non-reactive)are almost unchanged.On the other hand,the sintering metallization of Mo-Co/Ni-Si on the polycrystalline SiC can not only improve the wettability of pure Cu,Ag and Al on the SiC in varying degrees,but also change the reactive interfaces of Cu/SiC and Al/SiC systems into the non-or low reactive ones.
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