Recently,topological insulator(TI)have received a surge of attention because of its topologically protected helical edge states inside bulk insulating gap.Time-reversal symmetry demands that electrons moving in opposite directions carry opposite spins,So dissipationless transport edge channels is exist.Shared the dissipationless transport with the topological insulator,quantum anomalous Hall effect(QAHE)also receive enormous attention in condensed state community.Latest experiment prove that this novel phenomenon can be realized in Cr-doped Bi2Se3.However,Some special experimental conditions include ultralow temperature seriously hindered the process of its practical application.So researcher always hope to find materials which possess the QAHE and exist in a steady state condition under room temperature.Another important topic in spintronics is Rashba spin splitting(RSS),which mainly arise from the structural inversion symmetry broken.Its importance lies in its strength can be tuned just by an electric field or by strain.In our study,based on first principle density functional calculation,we propose a serial of big gap quantum spin Hall insulator(QSHI)SiSn-X and GeSn-X(X=F,Cl,Br,I,H and OH),their topological properties is proved by one dimensional Wannier function method,these new materials provide a new choice for futures room temperature application of QSHI.Moreover,with the help of Berry curvature calculation,we predict a large gap quantum anomalous Hall insulator(QAHI)is achieved if small strain is applied to half H-decorated GeSn on the side of Sn atoms,and the band gap can be effectively tuned by this small strain.Particularly,due to its owns reversal symmetry broken and effect of substrate,huge Rashba spin splitting is unexpectedly achieved if we put the GeSn-Ⅰ on the substrate of reconstructed InSb(111)surface.