Photoelectric Characteristics of InAlAs/InGaAs/InAs Quantum Dots-in-Well between Double Barrier

来源 :2016年上海市研究生学术论坛——电子科学与技术 | 被引量 : 0次 | 上传用户:dlcad
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  An InAlAs/InGaAs/InAs quantum dots-quantum well in double barrier structure has proved best S (signal)/D (dark current) by simulated and analyzed at 3.5V and-1.3V at 300K.The InGaAs EL or PL spectrums,dark current and transient Gaussian light pulse are numerically investigated in detail.We systematically study the simulation of photocurrent spectrum based on quantum dot in well detector shows near-infrared response under different environment and finds the response can tail up to 1.70μtm.At last, a low temperature tests for the GaAs/AlAs barrier hybrid structure.The oscillation is observed at 4.2K, which is attributed to the ordered emission of the LO phonons.
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