Band Alignment of Atomic Layer Deposited Al2O3/Zn0.8Al0.2Oy Hetero-interface Determined by X-ray Pho

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：jueduizhi

【摘要】

：

　　Al2O3 and ZnO/Al2O3 are prepared on silicon substrates via atomic layer deposition (ALD). Diethyl zinc (DEZ), trimethly aluminum (TMA) and deionized water a

【作者】

：

BaojunYan[1]ShulinLiu[1]YuekunHeng[1]YuzhenYang[2]

【机构】

：

Institute of High Energy Physics and State Key Laboratory of Particle Detection and Electronics,Chin

【出处】

：

The 6th International Conference on Nanoscience and Technolo

【发表日期】

：

2015年期

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　　Al2O3 and ZnO/Al2O3 are prepared on silicon substrates via atomic layer deposition (ALD). Diethyl zinc (DEZ), trimethly aluminum (TMA) and deionized water are used as Zn, Al and oxidant precursors respectively. A sandwich structure of ZnO/Al2O3 stack is proposed for ZnO/Al2O3 intermixing. The Zn0.8Al0.2Oy composite thin film can be obtained by adjusting ZnO/Al2O3 ALD pulse sequence. The film thicknesses and microstructure are characterized by spectroscopy ellipsometry and X-ray diffraction. The band offset and alignment of atomic layer deposited Al2O3/Zn0.8Al0.2Oy hetero-interface are systematically studied in this paper.

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Band Alignment of Atomic Layer Deposited Al2O3/Zn0.8Al0.2Oy Hetero-interface Determined by X-ray Pho

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