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5. Characteristics of SiO2 Etching by using Pulse-Time Modulation in 60 MHz/2 MHz Dual-Frequency Capaci

Characteristics of SiO2 Etching by using Pulse-Time Modulation in 60 MHz/2 MHz Dual-Frequency Capaci

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：jicaomin

【摘 要】

：

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity,but also low electron temperature.

【作 者】

：

M. H. Jeon S.-K Kang J. Y. Park G. Y. Yeom 

【机 构】

：

SKKU Advanced Institude of Nano Technology(SAINT), Sungkyunkwan University, Suwon, Kyunggi-do 440-74

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

SiO2 etching Dual-frequency VHF source 

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The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity,but also low electron temperature.

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