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  5. Self-assembled single InAs quantum dot coupled to different “environment” for quantum photonics

Self-assembled single InAs quantum dot coupled to different “environment” for quantum photonics

来源 :International Conference on Nanoscience & Technology,China 2 | 被引量 : 0次 | 上传用户：emilygl
【摘 要】
：
Our recent works on the Molecular Beam Epitaxial growth and quantum photonic characteristics of self-assembled InAs/GaAs quantum dots (QDs) embedded with layers, nanowires and cavities are reported.Sm
【作 者】
：
Ying Yu Guo-Wei Zha Mi-Feng Li Xiang-Jun Shang Jian-Xing Xu Li-Juan Wang Hai-Qiao Ni Zhi-Chuan Niu 
【机 构】
：
State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academ
【出 处】
：
International Conference on Nanoscience & Technology,China 2
【发表日期】
：
2013年3期
【关键词】
：
single InAs quantum dot molecular beam epitaxy micro-photoluminescence 
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　　Our recent works on the Molecular Beam Epitaxial growth and quantum photonic characteristics of self-assembled InAs/GaAs quantum dots (QDs) embedded with layers, nanowires and cavities are reported.Small InAs QDs were formed in various densities and environments using gradient InAs deposition on a nonrotating GaAs substrate.Micro-photoluminescence of reference single QDs embedded in cavity under various excitation powers and electric field gave insight into different carrier transport processes between QDs and the wetting layer [1].
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