【摘 要】
:
Ferroelectric random access memory(FRAM)is a non-volatile memory using ferroelectric capacitor and has excellent electronic properties,such as high writing
【机 构】
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FUJITSU SEMICONDUCTOR LIMITED
【出 处】
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The 5th International Congress on Ceramics, ICC5(第五届国际陶瓷大会)
论文部分内容阅读
Ferroelectric random access memory(FRAM)is a non-volatile memory using ferroelectric capacitor and has excellent electronic properties,such as high writing speed,high switching endurance,and low power consumption.We have developed FRAM using PZT(Pb(Zr,Ti)O3)and commercialized stand-alone FRAMs and embedded FRAMs(SoC FRAM)since 1999.Cumulative produced FRAM dyes are about 20 billion or more.
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