【摘 要】
：
Resistive switching (RS) phenomenon induced by redox in oxide electrolyte shows fascinating prospects for potential applications in resistance random access
【机 构】
：
Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronic
【出 处】
：
The 6th International Conference on Nanoscience and Technolo
论文部分内容阅读
Resistive switching (RS) phenomenon induced by redox in oxide electrolyte shows fascinating prospects for potential applications in resistance random access memory (RRAM), analog circuits and neuromorphic computing [1]. Under the external electric stimuli, the conductivity of RRAM can repeatedly change between high resistive state (HRS) and low resistive state (LRS). Based on the characteristics of RS hysteresis loop, the RS behavior can be classified as four modes: threshold switching, bipolar switching, unipolar switching and abnormal unipolar switching.
其他文献
Nanophotonic integrated circuits (NPICs) allow for realizing complex optical functionality in a scalable fashion. By relying on established fabrication tech
Vertical devices based on molecular monolayers deposited as SAMs or Langmuir Blodgett (LB) films between top and bottom electrodes are very attractive archi
Polymeric semiconductors have received considerable attentions since their discovery in 1970s due to their low-cost, light-weight and easy solution fabricat
Artificial electronic skin (e-skin) has attracted broad interests over the past few years due to its potential in health and robotic applications. Although
An ever increasing interest in the development and application of innovative optical and optoelectronic devices places greater emphasis for the advancement
Atomically thin two-dimensional (2D) materials and their heterostructures exhibit highly unusual behaviors. In this work, the isoelectronic doping of W into
Semiconductor homojunctions and heterojunctions are the crucial building blocks in modern semiconductor devices, such as transistors, photodetectors, light
To achieve faster, smaller and lower-power devices, semiconductor spintronics is proposed. Spintronics aims at manipulating the spin degree of freedom of ca
Lithium–sulfur (Li-S) battery is regarded as a promising candidate for the next generation secondary batteries because of their high theoretical energy den