论文部分内容阅读
叙述8毫米硅连续波崩越二极管的设计和制造,在频率35 GHz附近,金集成热沉的双漂移崩越管获得400～800mW连续输出功率,效率5％～10％,结温200～250℃。
Describing the design and manufacture of an 8-mm silicon continuous wave collapse diode, the dual-drift avalanche tube of a gold-integrated heat sink achieves continuous output power of 400-800 mW, efficiency of 5% -10%, junction temperature of 200-250 ℃.