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超大规模集成电路(超LSI)一直在继续不断地向前发展着。其发展趋势可以从代表最尖端技术的MOS存贮器的变化情况中看出来。自从1970年开发出1KDRAM以来,到今天为止,其集成度是以每3年增加4倍的速度发展着的,仅经过15年就已增长了1,000倍。从去年末的IEDM’84到今年2月的ISSCC’85期间,日本有关各公司先后发布了兆位DRAM技术的开发状况,可以说新的超LSI时代应该是兆位时代的序幕已经拉开了。
Very Large Scale Integrated Circuit (LSI) has been continuously evolving. The development trend can be seen from the change of MOS memory which represents the most advanced technology. Since the development of 1KDRAM in 1970, today the level of integration has grown by a factor of four every three years, a 1,000-fold increase in just 15 years. From the IEDM’84 at the end of last year to the ISSCC’85 in February this year, various Japanese companies have released the development status of megabit DRAM technology. It can be said that the new super LSI era should be the prelude to the megabyte era. .