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给出了一种减小SiC MESFET栅漏反向截止漏电流的工艺方法,通过采用LPCVD淀积厚SiO2和高温氧化工艺,使器件的性能得到一定的提升。从实验数据看出,器件在S波段工作时,器件的反向截止漏电流大幅度下降,且分散性得到改善,其功率附加效率和功率增益也分别提高了10%和1.5 dB。该方法充分发挥了SiC材料能形成自身氧化层的优势,结合Si工艺的特点,减小了氧化层的缺陷,并在一定程度上减小了器件的寄生电容。
A method to reduce the leakage current of the gate and drain of SiC MESFET is given. By using LPCVD to deposit thick SiO2 and high temperature oxidation process, the performance of the device is improved. From the experimental data, it can be seen from the experimental data that when the device operates in the S band, the reverse leakage current of the device is greatly reduced and the dispersibility is improved. The additional power and power gain of the device are respectively increased by 10% and 1.5 dB. This method gives full play to the advantage that SiC material can form its own oxide layer. Combined with the characteristics of Si process, the defects of the oxide layer are reduced and the parasitic capacitance of the device is reduced to a certain extent.