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介绍了GaAs大功率器件内匹配技术的基本原理,包括匹配电路原理、内匹配元件的参数计算方法等。以C波段40 W大功率器件为例讲述了内匹配技术在GaAs功率器件设计中的应用。通过大信号建模获得大栅宽器件模型,通过ADS软件进行内匹配电路参数的优化计算。通过电路制作及调试,实现了大功率器件的性能。经测试,当器件Vds=9 V时,在5.2~5.8 GHz频段内,输出功率Po≥40 W,功率增益Gp≥9 dB。测量值和设计值基本吻合。
The basic principle of matching technology in GaAs high power devices is introduced, including matching circuit principle, parameters calculation method of internal matched components and so on. Taking C-band 40 W high-power device as an example, the application of the internal matching technology in the design of GaAs power devices is described. The large gate width device model is obtained through large signal modeling, and the parameters of internal matching circuit are optimized and calculated by ADS software. Through the circuit production and debugging, to achieve the performance of high-power devices. Tested, when the device Vds = 9 V, in the frequency band of 5.2 ~ 5.8 GHz, the output power Po ≥ 40 W, the power gain Gp ≥ 9 dB. The measured value and the design value basically match.