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考虑二极管内部载流子所满足的非线性、耦合、刚性方程组中可能考虑的因素 ,利用自行研制的半导体器件模拟程序 m PND1 D,对硅二极管在高功率微波激励下的非线性特性进行了数值计算 ,结果显示出硅二极管对微波信号响应的非线性。
Considering the factors that may be considered in the nonlinear, coupled and rigid equations satisfied by the carriers inside the diode, the nonlinear characteristics of the silicon diode under the high-power microwave excitation were investigated by using the m PND1 D, a semiconductor device simulation program developed by ourselves. Numerical calculations show that the silicon diode nonlinear response to microwave signals.