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根据 Shockley 统计规律,用数值计算方法对深能级杂质 Pt 在 n 型硅晶体中的掺杂转型效应进行了定量描述.得到费米能级(E_F)随掺 Pt 浓度的变化关系及转型后 E_F 的钉扎位置.E_F 钉扎后,材料的电导激活能和电阻率趋于固定值,有利于制作高互换性、高稳定性热敏电阻。从实验上证实了 n 型硅掺 Pt 的转型效应。使掺 Pt 硅单晶热敏电阻 B 值的平均偏差<0.4%,阻值稳定性(100℃老化1000h)(△R)/R<0.15%。
According to Shockley’s law of statistics, the doping transition effect of deep-level impurity Pt in n-type silicon crystal was quantitatively described by numerical calculation. The relationship between the Fermi level (E_F) and Pt concentration was obtained and E_F Pinning location.E_F pinning, the material’s activation energy and resistivity tend to a fixed value, is conducive to the production of high interchangeability, high stability thermistor. The transition effect of n-type silicon doped with Pt was experimentally confirmed. The average deviation of B value of Pt-doped silicon single crystal thermistor is less than 0.4%, resistance stability (100 ℃ aging 1000h) (ΔR) / R <0.15%.