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已用多种块状和薄膜技术生长碲镉汞。目前红外探测器对材料有严格的要求。然而由于在生长三元化合物,特别是含汞化合物中所遇到的困难,单晶生长尚未能满足所有器件的要求。本工作研究了用于生长大面积(Hg Cd)Te和(Hg,Mn)Te单晶的移动加热器方法(THM法)。移动加热器方法作为一种生长高质量晶体的优良方法早已有报导。G.A.Wolff和A.I.Mlavshy阐述了THM方法的突出的优点。本文目的是提供电学性质、MIS
HgCdTe has been grown using a variety of bulk and thin film technologies. At present, infrared detectors have strict requirements on materials. However, due to the difficulties encountered in growing ternary compounds, especially mercury-containing compounds, single crystal growth has not yet been able to meet the requirements of all devices. In this work, a mobile heater method (THM method) for growing large area (Hg Cd) Te and (Hg, Mn) Te single crystals has been studied. Mobile heater methods have long been reported as an excellent method of growing high quality crystals. G.A.Wolff and A.I.Mlavshy illustrate the salient advantages of the THM method. The purpose of this paper is to provide electrical properties, MIS