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业已明了,SOI器件用绝缘物进行元件隔离,可减小电容和布线电容值。所以,人们深信集成电路可达到更加高密度,高速化。大家早就知道,SOI器件有采用在蓝宝石单晶衬底上外延生长单晶硅薄膜的“蓝宝石上硅”(SOS)器件及采用在SiO_2上沉积多晶硅薄膜制作的“绝缘体上硅”(SOI)器件。采用多晶硅薄膜制作的SOI器件与SOS器件相比较,其特点是,由于SOI器件能在非晶形绝缘膜上制作,所以,可采用任意衬底。但存在的问题是,由于其采用的薄膜不是单晶而是多晶,所以晶粒边界会造成载流子紊乱,MOS FET的场效应迁移率与体硅及SOS相比,降低至1％。
It has become clear that SOI devices can be insulated with components to reduce capacitance and wiring capacitance. Therefore, people are convinced that integrated circuits can achieve more high-density, high-speed. It has long been known that SOI devices have “silicon on sapphire” (SOS) devices that are epitaxially grown on sapphire single crystal substrates and “silicon on insulator” (SOIs) made of polysilicon films deposited on SiO 2, Device. Compared with SOS devices, SOI devices made of polysilicon thin film are characterized in that any substrate can be used because SOI devices can be fabricated on amorphous insulating films. However, the problem is that due to the fact that the thin film used is not single crystal but polycrystalline, the grain boundary can cause carrier disorder, and the field effect mobility of the MOS FET is reduced to 1% as compared with bulk silicon and SOS.