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硼微晶玻璃扩散源使用方便,价格低廉,在半导体器件制造中已应用较长时间。但它在一般预淀积温度下,淀积在半导体表面的硼硅玻璃较薄,浓度不易提高。如果提高温度,则会引起源片翘曲,且在硅片表面形成一层有害的硼硅相。因此,这种源片很少在高密度的集成电路中应用。本工作着重研究了在预淀积中增加并控制一定量的水汽在整个饱和气 体中的含量,使源片表面HBO_2的蒸发速率明显提高(HBO_2饱和蒸气压比B_2O_3大得多),从而得到一层更均匀,浓度更高,且较厚的的硼硅玻璃层。通过实验,给出了在不同的水汽含量及温度下与硼硅玻璃厚度t_(ox),薄层电阻ρ_S的关系曲线,得到了t_(ox),p_s均匀性、重复性曲线和纵向杂质分布曲线,并与常规预淀积条件下的t_(ox),ρ_S均匀性,重复性曲线,和杂质分布曲线作了比较。最后指出:该工艺在短沟道CMOS技术中,制作浅结p~+漏、源有特殊好处。克服了离子注入工艺中的“沟道效应”,为制作短沟道CMOS电路提供了方便。
Boron glass-ceramic diffusion source easy to use, low cost, semiconductor devices have been used in a long time. However, at normal pre-deposition temperature, the borosilicate glass deposited on the surface of the semiconductor is thinner and the concentration is not easy to increase. If you increase the temperature, it will cause the source chip warpage, and the surface of the silicon wafer to form a layer of harmful borosilicate. Therefore, this source chip rarely used in high-density integrated circuits. This work focuses on the increase of pre-deposition and control of a certain amount of water vapor in the entire saturated gas content, so that the surface of the source film HBO_2 evaporation rate increased significantly (HBO_2 saturated vapor pressure much larger than B_2O_3), resulting in a A more uniform, higher concentration, thicker borosilicate glass layer. The curves of t ox (ox) and sheet resistance ρ_S of borosilicate glass at different water vapor contents and temperatures were given by experiment. The distributions of ox, p_s, repeatability and longitudinal impurity were obtained Curves, and compared with conventional t_ (ox), ρ_S uniformity, repeatability curves and impurity distribution curves. Finally, it is pointed out that this process has special advantages in making short-p ~ + drain in short-channel CMOS technology. Overcomes the “channel effect” in the ion implantation process, and provides convenience for making a short-channel CMOS circuit.