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针对应变SiPMOSFET的弛豫SiGe虚拟衬底厚度大的问题(>1μm),采用了低温Si技术试制出240nm厚虚衬底的应变Si沟道PMOSFET。器件显示出良好的直流特性,其跨导和空穴迁移率比传统Si器件分别提高了30%和50%。器件性能可与采用1μm以上SiGe虚衬底的PMOSFET器件相比拟。
Aiming at the large thickness of relaxed SiGe dummy substrate (> 1μm) of strained SiPMOSFET, a strained Si-channel PMOSFET with 240nm thick dummy substrate was fabricated by using low-temperature Si technique. The device shows good DC characteristics with a transconductance and hole mobility of 30% and 50%, respectively, over conventional Si devices. The device performance can be compared with PMOSFET devices using SiGe-based substrates with 1μm or more thickness.