Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar+ ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015
CoFeZrRe amorphous materials with higher ferromagnetic loss over microwave range were prepared by mechanical alloying (MA). The technical parameters on electrom