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从固体模型理论的结果出发,计算了生长于Si(100)衬底上x值小于0.85的Si1-xGex合金材料(能带结构为类Si结构)的间接带隙与应变的关系,结果表明,应变的SiGe材料的带隙和完全弛豫状态下材料的带隙之差与应变呈线性关系.基于这一结果,提出了用测量带隙来间接测定SiGeSi应变状态的方法.用带隙法和x射线双晶衍射法测量了不同应变状态下的SiGeSi多量子阱材料的应变弛豫度,两者可以较好的符合,表明带隙法测量SiGe应变弛豫度是可行的.
Based on the solid model theory, the relationship between the indirect band gap and strain of Si1-xGex alloy (the band structure is Si-like) grown on Si (100) substrate with x value less than 0.85 is calculated. Based on this result, a method to measure the strain state of SiGeSi indirectly by measuring the bandgap is proposed.The bandgap method and the bandgap method The X-ray double crystal diffraction method measured the strain relaxation of SiGeSi multiple quantum well materials under different strain states, which can be in good agreement with each other, indicating that the bandgap method is feasible to measure the relaxation of SiGe strain.