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Ⅰ.引言在讨论表面电荷传输器件对移位寄存器的适用性时,重要的问题是怎样才能根据目前采用的MOS晶体管工艺的正常发展,可指望将这种器件的成本大大地降低,或者是提高最大工作速度。为了回答这个问题,必须对成本作深入的了解。在量度每位的成本时,考虑了包括两种直接的成本,即材料成本和工艺成本。当然,和系统成本也有关。还考虑了另外的因素,诸如功率耗散,必需的互连数和系统中输入、输出与其他元件的相容性。
I. INTRODUCTION In discussing the applicability of surface charge transport devices to shift registers, an important issue is how to reduce the cost of such devices greatly, or to improve them, depending on the normal development of the MOS transistor processes currently used Maximum working speed. In order to answer this question, we must make a deep understanding of the cost. In measuring the cost per bit, two direct costs are considered, namely the material cost and the process cost. Of course, and the system cost is also related. Other factors are also considered, such as power dissipation, the number of interconnects required, and the compatibility of inputs and outputs with other components in the system.