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将台面和平面技术结合能够使InGaAs/InP探测器得到扩散掩蔽和随后的SiO_2膜钝化,且不会使暗电流恶化。100℃下初步寿命测试是令人鼓舞的。
Combining mesa and planar technology enables diffusion masking and subsequent SiO 2 film passivation of InGaAs / InP detectors without deteriorating dark current. Initial life testing at 100 ° C is encouraging.