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采用氧氮共注的方法制备了氮氧共注隔离SOI(SIMON)圆片,对制备的样品进行了二次离子质谱和透射电镜分析,并对埋层结构与抗辐射性能的机理进行了分析。结果表明,注氮剂量较低时埋层质量较好。机理分析结果表明,圆片的抗辐照性能与埋层质量之间存在很密切的关系,埋层的绝缘性能是影响器件抗辐射效应的关键因素。
Nitrogen and oxygen co-injection isolated SOI (SIMON) wafers were prepared by oxygen-nitrogen co-injection method. The prepared samples were analyzed by secondary ion mass spectrometry and transmission electron microscopy. The structure of the buried layer and the mechanism of radiation resistance were analyzed . The results show that the quality of buried layer is better when the dosage of nitrogen is lower. The mechanism analysis shows that there is a close relationship between the anti-radiation performance of the wafer and the quality of the buried layer. The insulation performance of the buried layer is the key factor that affects the anti-radiation effect of the device.