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在同一Hg1-xCdxTe晶片上(x=0.217)制备了单层ZnS钝化和双层(CdTe+ZnS)钝化的两种器件,对器件烘烤前后的暗电流和1f噪声进行了测试,烘烤前发现,ZnS钝化的器件在反偏较大时具有较大的表面隧道电流,而这种表面漏电流是ZnS钝化器件具有较大1f噪声电流的原因,通过高分辨x射线衍射中的倒易点阵技术(reciprocal spacemapping,RSM)研究了单双层钝化对HgCdTe外延层晶格完整性的影响,发现单层ZnS钝化的HgCdTe外延层产生了大量缺陷,而这些缺陷正是ZnS钝化器件具有较大表面漏电流和1f噪声的原因.经过高温烘烤后,ZnS钝化的器件暗电流和1f噪声增加,而双层钝化器件经过高温烘烤后性能提高.RSM的研究表明,高温烘烤后ZnS钝化的HgCdTe外延层产生大量缺陷,这些缺陷正是单层钝化器件表面漏电流和1f噪声电流增加的原因.
Two kinds of devices with single-layer ZnS passivation and double-layer (CdTe + ZnS) passivation were fabricated on the same Hg1-xCdxTe wafer (x = 0.217). The dark current and 1f noise before and after baking were measured. It was found that the ZnS-passivated device has a large surface tunneling current when it is reverse biased, and this surface leakage current is the reason that the ZnS passivation device has a larger 1f noise current. Through high-resolution X-ray diffraction The reciprocal spacemapping (RSM) studies the effect of single and double passivation on the lattice integrity of the HgCdTe epitaxial layer. It is found that the single-layer ZnS-passivated HgCdTe epitaxial layer has a large number of defects, ZnS passivation device has a larger surface leakage current and 1f noise reasons.After high temperature baking, ZnS passivated device dark current and 1f noise increased, while the double passivation device performance after baking at high temperature increased .RSM The results show that the HgCdTe epitaxial layers passivated by ZnS have a large number of defects after high temperature baking. These defects are the reasons for the increase of surface leakage current and 1f noise current of single passivation devices.