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随着集成电路特征尺寸的减小、低k介质的引入及晶圆尺寸的增加,如何保证在低压无磨料条件下完成大尺寸铜互连线平坦化已经成为集成电路制造工艺发展的关键。采用法国Alpsitec公司的E460E抛光机在低压低磨料的条件下,研究了12英寸(1英寸=25.4 mm)无图形(blanket)铜膜CMP工艺和抛光液配比对抛光表面质量的影响。实验结果表明,在压力为0.65 psi(1 psi=6.89×103 Pa),抛光液主要成分为体积分数分别为5%的螯合剂、2%的氧化剂和3%的表面活性剂。抛光后表面无划伤,表面非均匀性为0.085,抛光速率为400 nm.min-1,表面粗糙度为0.223 nm,各参数均满足工业化生产的需要。
With the reduction of integrated circuit feature size, the introduction of low-k dielectrics and the increase of wafer size, how to ensure the planarization of large-size copper interconnect lines under the condition of low pressure and no abrasive has become the key to the development of integrated circuit manufacturing technology. Using the E460E polishing machine from Alpsitec, France, the effects of 12-inch (1 inch = 25.4 mm) blanket copper film CMP process and polishing solution on the polished surface quality were investigated under low pressure and low abrasive conditions. The experimental results show that the main components of the polishing solution are 5% volume fraction of chelating agent, 2% oxidant and 3% surfactant at a pressure of 0.65 psi (1 psi = 6.89 × 103 Pa). After polishing, the surface is not scratched, the surface non-uniformity is 0.085, the polishing rate is 400 nm.min-1 and the surface roughness is 0.223 nm. All the parameters meet the needs of industrial production.