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新型的电场终止型绝缘栅双极晶体管(FS-IGBT)改善了传统穿通型(PT)IGBT性能上的不足,但对于1 200 V以下器件需要超薄片加工。为打破加工技术的限制,用简易的厚片工艺实现薄片性能,可以在集电结附近设置载流子局域寿命控制层(LCLC)来改善器件性能。目前有两种方案:将LCLC区置于集电区内形成内透明集电极IGBT(ITC-IGBT);或置于缓冲层内,形成缓冲层局域寿命控制IGBT。对这两种结构的600 V器件结合具体参数进行了仿真和比较。仿真结果表明,两种结构的器件可实现几近相同的折中特性,但当LCLC区位于缓冲层内时,需要更低的局域寿命,且更易发生通态特性的回跳现象,影响器件性能。因此将LCLC区置于集电区,即形成ITC-IGBT结构是一个更好的选择,为探索用厚片工艺制造高性能IGBT提供了必要的参考。
The new field-terminated Insulated Gate Bipolar Transistor (FS-IGBT) improves the performance of traditional pass-through (PT) IGBTs but requires ultra-thin sheet processing for devices under 1 200 V. In order to break the limitation of the processing technology and realize the sheet performance by the simple slab process, it is possible to improve the device performance by providing a carrier local lifetime control layer (LCLC) near the collector junction. Currently, there are two solutions: the LCLC area is placed in the collector area to form an inner transparent collector IGBT (ITC-IGBT); or placed in the buffer layer to form a buffer layer local life control IGBT. The 600 V devices with these two structures are simulated and compared with the specific parameters. Simulation results show that the two structures of the device can achieve almost the same compromise characteristics, but when the LCLC region is located in the buffer layer, the need for lower local life expectancy, and more prone to the on-state characteristics of the jump phenomenon affecting the device performance. Therefore, placing the LCLC region in the collector region, that is, forming the ITC-IGBT structure is a better choice and provides the necessary reference for exploring the high-performance IGBT fabricated by the slab process.