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应用范围、效果和优点本发明介绍了在碲镉汞半导体表面上以臭氧形成半导体表面层的自身氧化物,是一种清洁、简单又可靠的方法。不需要高能离子、电磁辐射或加热。氧化层生长会自己受到限制。臭氧钝化层似乎可与ZnS绝缘层相容。该氧化层减低了表面态密度,增加了近表面的少数载流子的贮存时间,导致了低的表面复合速率,改进了碲镉汞红外探测器和CCD的性能,本方法适用于x值的范围为x=0～1。工艺原理当臭氧分子分解时,只有一个氧原子释出而留下一个氧分子成为副产物,释放的氧原子大概会扩散入晶体表面,其中一部分则被吸附
Applications, Effects and Advantages This invention describes the formation of self-oxides of semiconducting surface layers with ozone on the surface of a HgCdTe semiconductor, which is a clean, simple and reliable method. Does not require high-energy ions, electromagnetic radiation or heating. Oxide growth is limited by itself. The ozone passivation layer appears to be compatible with the ZnS insulation. The oxide layer reduces the surface state density and increases the storage time of the minority carriers near the surface, resulting in a low surface recombination rate, improving the performance of the mercury cadmium telluride infrared detector and the CCD. The method is suitable for x value The range is x = 0 ~ 1. Process Principle When ozone molecules are decomposed, only one oxygen atom is released and one oxygen molecule is left as a by-product, the released oxygen atoms probably diffuse into the crystal surface and some of them are adsorbed