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本文论述了LEC-InP单晶生长过程中出现孪晶现象的机理,实验论证了在大多数情况下孪晶面是由棱上{111}小平面发展而成的。用选择生长方向的方法难以消除此现象,应严格控制多晶原料的质量及B_2O_3中的水含量,并选择最佳的温度分布等生长条件。
In this paper, the mechanism of twinning in the growth of LEC-InP single crystal is discussed. The experiment proves that in most cases the twin plane is formed by the {111} facets on the ridge. It is difficult to eliminate this phenomenon by choosing the growth direction. The quality of polycrystalline raw materials and the water content in B_2O_3 should be strictly controlled, and the optimal growth conditions such as temperature distribution should be selected.