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在位错密度不同的LEC半绝缘（SI）GaAs衬底上离子注入制做MESFETs，观察衬底位错对MESFETs旁栅效应的影响．结果表明，衬底中高位错密度可以抑制旁栅效应．
MESFETs were fabricated by ion implantation on LEC semi-insulating (SI) GaAs substrates with different dislocation densities to observe the effect of substrate dislocations on the parallel gate effect of MESFETs. The results show that the high dislocation density in the substrate can suppress the side-gate effect.