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钽铌酸钾(KTa_(1-x)Nb_xO_3,简称KTN),铁电与顺电相变温度(T_c)可通过改变钽铌比调节,将T_c调节到近室温附近,其晶体具有良好的热释电、电光和非线性光学性质,可用于热释电探测器、电光调制器、电光偏转器、全息存贮等,其薄膜可用于光电子器件和集成光学器件中.当x=0.35时,KTN在无机材料中具有最大的二次电光系数.我们用Sol-Gel法制备了其沿(100)、(111)取向生长的薄膜.薄膜的结晶学性能对薄膜的电学、光学和电光性能有很大的影响,如焦绿石结构相的存在,使KTN薄膜失去铁电性.另外,薄膜的Curie温度(T_c)升高,介电温谱峰竞化,剩余极化强度降低,电滞回线变窄等,不仅与尺寸效应、衬底对薄膜的应力有关,而且与薄膜的结晶学性能有关.本文研究了热处理工艺对薄膜的结晶学性能的影响.
Tantalum niobate (KTa_ (1-x) Nb_xO_3, referred to as KTN), ferroelectric and paraelectric transition temperature (T_c) can be adjusted by changing the ratio of tantalum niobium, T_c near room temperature regulation, the crystal has a good heat release Electro-optic, electro-optical and nonlinear optical properties can be used in pyroelectric detectors, electro-optic modulators, electro-optic deflectors, holographic storage, etc. The films are used in optoelectronic devices and integrated optics. In the inorganic materials, the maximum secondary electro-optic coefficient is obtained.We prepared the films grown in the (100), (111) orientation by Sol-Gel method.The crystallographic properties of the films have great electrical, optical and electro-optical properties , Such as the pyrochlore phase, the KTN thin film loses ferroelectricity.In addition, the Curie temperature (T_c) of the film increases, the peak dielectric dielectric temperature increases, the remanent polarization decreases and the hysteresis loop narrows Etc., not only with the size effect, the substrate stress on the film, but also with the crystallinity of the film.In this paper, the influence of heat treatment on the crystallinity of the film was studied.