We propose a solvable model of topological characteristics for a microwave signal transmitting system,which is named as a repairable linear m-consecutive-k-out-
Double-peak N-shaped negative differential resistance (NDR) with a high peak-to-valley ratio is observed in the output characteristics of a GaAs-based modulatio
PN junctions and schottky diodes are widely employed as electron-hole pair collectors in electron beam induced current(EBIC) techniques and betavoltaic batterie
Based on the vectorial Rayleigh diffraction integral,the integral formulae of three electromagnetic field components for radially polarized Laguerre-Gaussian be
GaN nanowires are grown by hydride vapor phase epitaxy using nickel as a catalyst.The properties of the obtained GaN nanowires are characterized by scanning and
Following the closure relation of normal mode theory,the source depth can be estimated approximately provided that the eigenfunction and the excited amplitude w
The strong dependence of photoluminescence of charge transfer excited states or exciplex in a blend film of poly(9,9-dioctylfluorene-co-benzothiadiazole)(F8BT)a
The P+ a-SiC∶H/N+ poly-Si solar cell is simulated by an AMPS-1D device simulator to characterize the new thin film polycrystalline-silicon solar cell. In order