Double-peak N-shaped negative differential resistance (NDR) with a high peak-to-valley ratio is observed in the output characteristics of a GaAs-based modulation-doped field effect transistor with InAs quantum dots in the barrier layer (QDFET).One NDR peak with a higher source-drain voltage VDS is explained as the real-space transfer (RST) of high-mobility electrons in the channel into the quantum dots layer,while the other with a lower VDS is caused by the high-mobility RST electrons in the channel into the modulation-doped AIGaAs barrier layer on the other side.We depict a point how a thinner Schottky barrier layer provides a stronger potential,opening a possibility of two-directional channel electron transfer when a much higher VG is applied.The result suggests that the QDFET can be an attractive candidate for high-speed logic application and memory devices.