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一、引言 随着集成电路向更大规模、更高性能方向发展,器件的特征尺寸变得越来越小。传统的实验方法由于周期长、成本高已难以满足工艺开发和优化的要求;计算机技术的发展,改变了研究工艺的方法。借助模拟程序分析工艺过程,并寻找最佳的工艺条件将成为一种趋势。 模拟器件在刻蚀过程中的形貌特征,可以获得各种工艺条件变化时对器件条宽等因素的影响规律,并为优化工艺条件提供依据。由伯克利分校的A.R.Neureuther和W.G.Oldham领导的小组开发的形貌模拟程序SAMPLE(Simulation And Modelling of Profile for Lithography and Etching)经过不断的完善和扩充后,已成为二维形貌模拟中最为完整的工艺模拟程序。该程序能模拟接触式、投影式曝光;X射线和电子束曝光、显影、湿法和干法腐蚀,以及淀积等工艺过程。
I. INTRODUCTION With the development of integrated circuits to larger scale and higher performance, the feature size of the device becomes smaller and smaller. Due to the long cycle and high cost, the traditional experimental methods have not been able to meet the requirements of process development and optimization. The development of computer technology has changed the way of studying process. Using simulation programs to analyze processes and find the best process conditions will be a trend. The morphology of the simulated device during the etching process can obtain the rule of influence on the device width and other factors when various process conditions change, and provide the basis for optimizing the process conditions. After continuous improvement and expansion, SAMPLE (Simulation And Modeling of Profile for Lithography and Etching) developed by the team headed by ARNeureuther and WGOldham of Berkeley has become the most complete process in two-dimensional topography simulation Simulation program. The program can simulate contact, projection exposure; X-ray and electron beam exposure, development, wet and dry etching, and deposition process.