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设计了一种工作在恒电压模式的、微热板结构的单片集成电阻真空传感器芯片.提出了一种以CMOS集成电路中的介质层与钝化层为结构层、栅多晶硅为牺牲层、第二层多晶硅为加热电阻的微传感器单芯片集成工艺模式,制定了相应的工艺流程.采用0.6μm CMOS数模混合集成电路工艺,结合牺牲层腐蚀技术实现了单片集成真空传感器的加工,测试结果显示该芯片能够测量2~105Pa范围内的气压大小,且输出电压范围可调,验证了单片集成工艺的可行性.
A kind of monolithic integrated resistance vacuum sensor chip with a thermo-voltage mode and a micro-thermal plate structure was designed.With a dielectric layer and a passivation layer as the structure layer in the CMOS integrated circuit and a gate polysilicon as the sacrificial layer, The second layer of polycrystalline silicon is a micro-sensor single-chip integrated process mode of heating resistor, and a corresponding process flow is established.Using 0.6μm CMOS digital-analog hybrid integrated circuit technology, combined with sacrificial layer etching technology to achieve a single integrated vacuum sensor processing, testing The results show that the chip can measure the pressure in the range of 2 ~ 105Pa, and the output voltage range is adjustable, which verifies the feasibility of the monolithic integrated process.