随着集成电路的不断发展,集成度的不断提高,对材料及材料加工提出了越来越高的要求,目前在半导体电路的生产中,大多数采用大园片生产,即在大园片上制造出若干个分离管芯或电路,然后用划片分割的方法把这些管芯或电路分割成单个单元,再经过键压封装等工序完成器件生产.由于硅单晶各晶向是有各向异性的性质,以往任意排列的管芯图形划片时受到{111}解理面的影响,划片后不沿刀痕碎裂,而是沿解理面裂 With the continuous development of integrated circuits, the continuous improvement of the integration of materials and materials processing put forward higher and higher requirements, the current production of semiconductor circuits, the majority of the use of large wafer production, that is, large wafer production A number of separate die or circuit, and then use the method of dicing division of these die or circuit into a single unit, and then through the key pressure package assembly process to complete the device due to the crystal orientation of silicon is anisotropic The nature of the previous arbitrary arrangement of the die pattern scribing by the {111} cleavage plane, scribe not along the cleavage after cleavage, cleavage cleft along the face