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重点开展了稳态、瞬态X射线辐照引起的金属 氧化物 半导体 (CMOS)器件剂量增强效应relativedoseenhance menteffect(RDEF)研究 .通过实验给出辐照敏感参数随总剂量的变化关系 ,旨在建立CMOS器件相同累积剂量时Χ射线辐照和γ射线辐照的总剂量效应损伤等效关系 .在脉冲X射线源denseplasmafocus(DPF)装置上 ,采用双层膜结构开展瞬态翻转增强效应研究 ,获得了瞬态翻转剂量增强因子 .这些方法为器件抗X射线辐照加固技术研究提供了实验技术手段
We focus on the research of relativedoseenhancement menteffect (RDEF) on dose-effect of metal oxide semiconductor (CMOS) devices caused by steady-state and transient X-ray irradiation.We give experimentally the relationship between the radiation sensitive parameters and the total dose, The equivalent dose-effect relationship of X-ray irradiation and γ-ray irradiation at the same cumulative dose of CMOS devices was studied.The transient flip-up enhancement effect was studied on denseplasmafocus (DPF) The transient flip-up dose enhancement factor.These methods provide the experimental technical means for the research of device anti-X-ray irradiation reinforcement technology